CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C824N3
Issued Date : 2006.06.06
Revised Date :
Page No. : 1/6
BTB1198N3
Features
•
Low V
CE(SAT)
, V
CE(SAT)
= -0.16V (Typ.) @ I
C
/I
B
=-500mA/-50mA
•
High breakdown voltage, BV
CEO
=-80V
•
Complementary to BTD1782N3
•
Pb-free package
Symbol
BTB1198N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (T
A
=25°C)
Power Dissipation (T
C
=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Free air condition
BTB1198N3
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
-80
-80
-5
-0.5
225
(Note)
560
556
(Note)
223
150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
