CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 1/6
BTB1184J3
Features
•
Low V
CE
(sat)
•
Excellent current gain characteristics
•
Complementary to BTD1760J3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
-50V
-3A
130mΩ
Symbol
BTB1184J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-60
-50
-6
-3
-7
1
15
150
-55~+150
Unit
V
V
V
*1
*2
A
W
°C
°C
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
