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BTB1236AE3 参数 Datasheet PDF下载

BTB1236AE3图片预览
型号: BTB1236AE3
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 151 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1236AE3的Datasheet PDF文件第1页浏览型号BTB1236AE3的Datasheet PDF文件第3页浏览型号BTB1236AE3的Datasheet PDF文件第4页  
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
h
FE
1
h
FE
2
f
T
Cob
Min.
-180
-160
-5
-
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-1
-1
-0.6
-1.5
200
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C854E3
Issued Date : 2004.07.28
Revised Date :
Page No. : 2/4
Test Conditions
I
C
=-50
µ
A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50
µ
A, I
C
=0
V
CB
=-160V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-1A, I
B
=-100mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-100mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-150mA
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification of h
FE
1
Rank
Range
K
60~120
P
82~190
Q
120~200
BTB1236AE3
CYStek Product Specification