CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817I3
Issued Date : 2003.07.03
Revised Date : 2004.07.02
Page No. : 1/4
BTB1243I3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.2 V (typical), at I
C
/ I
B
= -2A / -0.1A
•
Excellent current gain characteristics
•
Complementary to BTD1864I3
Symbol
BTB1243I3
Outline
TO-251
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-50
-50
-6
-3
-7
1
15
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTB1243I3
CYStek Product Specification