CYStech Electronics Corp.
Spec. No. : C811J3
Issued Date : 2008.12.10
Revised Date : 2009.02.04
Page No. : 1/7
PNP Epitaxial Planar High Current (High Performance) Transistor
BTB1216J3
Features
•
4 Amps continuous current, up to 10 Amps peak current
•
Very low saturation voltage
•
Excellent gain characteristics specified up to 3 Amps
•
Extremely low equivalent on resistance, R
CE(SAT)
=90m
Ω
at 3A
•
RoHS compliant package
BV
CEO
I
C
R
CE(SAT)
-140V
-4A
90mΩ typ.
Symbol
BTB1216J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B
C
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @T
A
=25°C
Power Dissipation @T
C
=25°C
Operating and Storage Temperature Range
Note: 1.Single pulse, Pw≤10ms
BTB1216J3
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj ; Tstg
Limits
-180
-140
-6
-4
-10
(Note 1)
-1
1
20
-55 ~ +150
Unit
V
V
V
A
A
A
W
°C
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
