CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 1/4
BTB1386LN3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTD2098LN3
Symbol
BTB1386LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note :
1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
P
D
R
θJA
Tj
Tstg
Limits
-20
-15
-6
-5
-10
(Note )
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB1386LN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
