CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 1/4
BTB1386N3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage, V
CE(sat)
=-0.25V(typ)
Applications
•
Low frequency amplifier
•
Driver
Symbol
BTB1386N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(
Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
-15
-12
-6
-4
-8
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTB1386N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
