BTB1426A3 参数 Datasheet PDF下载

CYStech Electronics Corp.

Low V

CE(SAT)

PNP Epitaxial Planar Transistor

Spec. No. : C816A3-H

Issued Date : 2003.07.02

Revised Date :

Page No. : 1/4

BTB1426A3

Description

The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications.

•

High DC current gain and excellent h

FE

linearity.

•

Low Saturation Voltage

V

CE(sat)

=-0.5V(max)(I

C

=-2A, I

B

=-100mA).

Features

Symbol

BTB1426A3

Outline

TO-92

B：Base

C：Collector

E：Emitter

ECB

Absolute Maximum Ratings

(Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulsed)(

Note 1)

Power Dissipation

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

Note : Single pulse, Pw≤10ms, Duty Cycle≤2%.

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

Pd

R

θJA

Tj

Tstg

Limits

-20

-20

-6

-3

-5

(Note )

750

167

150

-55~+150

Unit

V

V

V

A

mW

°C/W

°C

°C

BTB1426A3

CYStek Product Specification