CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817N3-R
Issued Date : 2003.04.03
Revised Date :2006.10.13
Page No. : 1/5
BTB1424N3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage
V
CE(sat)
=-0.25V(typ)(I
C
=-2A, I
B
=-100mA).
•
Complementary to BTD2150N3
•
Pb-free package
Symbol
BTB1424N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(
Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
2. Device mounted on a ceramic board ( 600mm²×0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
-50
-50
-5
-3
-7
0.9
(Note 2)
138.9
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C
°C
BTB1424N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
