CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817D3
Issued Date : 2005.05.16
Revised Date :2006.04.21
Page No. : 1/4
BTB1424AD3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage, V
CE(sat)
=-0.3V(typ) @I
C
=-2A, I
B
=-100mA.
•
Complementary to BTD2150AD3
•
Pb-free package
Symbol
BTB1424AD3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
EC B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
(Note 1)
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
d
T
j
T
stg
Limits
-50
-50
-6
-3
-5
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
BTB1424AD3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
