CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817T3
Issued Date : 2005.10.20
Revised Date :
Page No. : 1/4
BTB1424AT3
Features
•
Low V
CE(sat)
, typically -0.3V at I
C
/ I
B
= -2A / -0.1A
•
Excellent current gain characteristics
•
Complementary to BTD2150AT3
•
Pb-free package
Symbol
BTB1424AT3
Outline
TO-126
B
：
Base
C
：
Collector
E
：
Emitter
E C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350µs, Duty≦2%
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
Limit
-50
-50
-6
-3
-7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
BTB1424AT3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
