CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2005.03.09
Page No. : 1/5
BTC2411N3
Description
•
The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching
application.
•
High I
C(Max)
, I
C(Max)
= 0.6A.
•
Low V
CE(sat)
, Typ. V
CE(sat)
= 0.4V at I
C
/I
B
= 500mA/50mA.
Optimal for low Voltage operation.
•
Complementary to BTA1036N3
.
•
Pb-free package
Symbol
BTC2411N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (T
A
=25°C)
Power Dissipation (T
C
=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Free air condition
BTC2411N3
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
75
40
6
0.6
225
(Note)
560
556
(Note)
223
150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C