CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208M3
Issued Date : 2003.08.18
Revised Date :2006.12.04
Page No. : 1/5
BTC3906M3
Description
The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.
Features
•
High collector-emitter breakdown voltage. (BV
CEO
=160V @ I
C
=1mA)
•
Complement to BTA1514M3
•
Pb-free package
Symbol
BTC3906M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
180
160
6
600
0.6
1
(Note 1)
2
(Note 2)
150
-55~+150
Unit
V
V
V
mA
W
W
W
°C
°C
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BTC3906M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
