CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C231N3R
Issued Date : 2003.04.12
Revised Date :2005.06.01
Page No. : 1/5
BTC4062N3
Features
•
High Breakdown Voltage:BVCEO≥350V
•
Complementary to BTA1722N3
•
Pb-free package
Symbol
BTC4062N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current---continuous
Power Dissipation @T
A
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
350
350
6
500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4062N3
CYStek Product Specification