CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C819M3
Issued Date : 2005.08.16
Revised Date :2005.10.05
Page No. : 1/5
BTC4672M3
Features
•
Low saturation voltage, typically V
CE(sat)
=0.1V at I
C
/I
B
=1A/50mA
•
Excellent DC current gain characteristics
•
Complementary to BTA1797M3
•
Pb-free package
Symbol
BTC4672M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Limits
60
50
6
3
6
0.6
1
(Note 1)
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
Junction Temperature
Tj
Storage Temperature
Tstg
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BTC4672M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
