CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C651M3
Issued Date : 2003.11.07
Revised Date :
Page No. : 1/4
BTC5103M3
Features
•
High I
C
, I
C(DC)
=5A
•
Low V
CE
(sat), 0.3V typically
•
Good current gain linearity
Symbol
BTC5103M3
Outline
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limit
80
60
5
5
10
(Note 1)
0.6
1
(Note 2)
2
(Note 3)
208
125
(Note 2)
62.5
(Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
θJA
Tj
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
BTC5103M3
CYStek Product Specification