CYStech Electronics Corp.
High Frequency NPN Epitaxial Planar Transistor
Spec. No. : C213WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 1/3
BTC5181WC3
Description
The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification
application.
Symbol
Outline
SOT-523
BTC5181WC3
B：Base
C：Collector
E：Emitter
Features
•
Low current consumption and high gain:
∣S
21e
∣²
= 12dB ( typ. ) at V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
∣S
21e
∣²
= 11dB ( typ. ) at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
•
Super mini-mold package
Applications
•
Low noise and high gain amplifiers & Oscillator buffer amplifiers
Absolute Maximum Ratings
(T
A
=25℃)
Parameters
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
Pd
T
j
T
stg
Limits
3
5
2
10
30
150
-65~+150
Unit
V
V
V
mA
mW
°C
°C
BTC5181WC3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
