CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
Page No. : 1/4
BTD1664M3
Features
•
The BTD1664M3 is designed for general purpose low frequency power amplifier applications.
•
Low V
CE
(sat), V
CE
(sat)=0.15V (typical), at I
C
/ I
B
= 400mA / 20mA
•
Complementary to BTB1132M3
Symbol
BTD1664M3
Outline
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Pd
Tj
Tstg
Limits
40
20
5
800
1.5
(Note 1)
0.5
2
(Note 2)
150
-55~+150
Unit
V
V
V
mA
A
W
W
°C
°C
Note : 1. Single pulse, Pw = 20ms, duty
≤
2%.
2. When mounted on a 40
×40 ×0.7
mm ceramic board.
BTD1664M3
CYStek Product Specification