CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848J3
Issued Date : 2003.04.18
Revised Date : 2005.10.04
Page No. : 1/5
BTD1760J3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB1184J3
•
Pb-free package
Symbol
BTD1760J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation(T
A
=25℃)
Power Dissipation(T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
50
50
5
3
7
*1
1
15
*2
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note : *1. Single Pulse Pw=10ms
*2 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
BTD1760J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
