CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
BTD1805J3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
•
Very low collector-to-emitter saturation voltage
•
Fast switching speed
•
High current gain characteristic
•
Large current capability
Applications
•
CCFL drivers
•
Voltage regulators
•
Relay drivers
•
High efficiency low voltage switching applications
Symbol
BTD1805J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
BTD1805J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
