CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855J3
Issued Date : 2004.10.04
Revised Date :
Page No. : 1/4
BTD1857AJ3
Description
•
High BV
CEO
•
High current capability
•
Complementary to BTB1236AJ3
Symbol
BTD1857AJ3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
180
160
5
1.5
3
1
10
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
BTD1857AJ3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
