CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855M3-R
Issued Date : 2004.08.06
Revised Date : 2005.01.14
Page No. : 1/4
BTD1857AM3
Description
•
High BV
CEO
•
High current capability
•
Complementary to BTB1236AM3
Symbol
BTD1857AM3
Outline
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Limits
180
160
5
1.5
3
0.6
1
(Note 1)
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
Junction Temperature
Tj
Storage Temperature
Tstg
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BTD1857AM3
CYStek Product Specification