CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2004.07.01
Page No. : 1/4
BTD2098N3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386N3
Symbol
BTD2098N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
40
20
7
5
8
(Note )
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD2098N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
