CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C850J3
Issued Date : 2004.02.27
Revised Date :2005.10.04
Page No. : 1/4
BTD2118LJ3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1412LJ3
•
Pb-free package
Symbol
BTD2118LJ3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
(T
A
=25℃)
P
D
(T
C
=25℃)
Tj
Tstg
Limits
40
15
6
5
8
(Note 1)
1
10
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
BTD2118LJ3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
