CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848L3
Issued Date : 2004.10.07
Revised Date : 2204.11.15
Page No. : 1/4
BTD2150L3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB1424L3
Symbol
BTD2150L3
Outline
SOT-223
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
40
30
5
3
5
150
-55~+150
Unit
V
V
V
A
W
°C
°C
BTD2150L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
