CYStech Electronics Corp.
Low V
CE(sat)
NPN Epitaxial Planar Transistor
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 1/4
BTD2150N3
Features
•
Low V
CE(sat)
, typically 0.25V at I
C
/ I
B
= 2A / 0.1A
•
Excellent current gain characteristics
•
Complementary to BTB1424N3
Symbol
BTD2150N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limit
60
60
6
4
7
(Note 1)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD2150N3
CYStek Product Specification