CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 1/4
BTD2195M3
Description
The BTD2195M3 is designed for use in general purpose amplifier and low speed switching
application.
Equivalent Circuit
BTD2195M3
B
C
Outline
SOT-89
E
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limits
130
120
5
4
6
(Note 1)
0.6
1
(Note 2)
2
(Note 3)
208
125
(Note 2)
62.5
(Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
θJA
Tj
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
BTD2195M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
