CYStech Electronics Corp.
Low V
CE(sat)
NPN Epitaxial Planar Transistor
Spec. No. : C848M3-H
Issued Date : 2003.06.17
Revised Date : 2005.07.11
Page No. : 1/4
BTD882AM3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772AM3
Symbol
BTD882AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to
Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limit
80
50
5
3
7
(Note 1)
600
1
(Note 2)
2
(Note 3)
208
125
(Note 2)
62.5
(Note 3)
150
-55~+150
Unit
V
V
V
A
A
mW
W
W
°C/W
°C/W
°C/W
°C
°C
R
θJA
Tj
Tstg
Note : 1. Single Pulse Pw
≦
350µs, Duty
≦
2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
BTD882AM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
