CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C818L3
Issued Date : 2003.08.13
Revised Date :
Page No. : 1/5
BTN1053L3
Features
•
5W power dissipation
•
Excellent H
FE
Characteristics up to 1A
•
Low Saturation Voltage
V
CE(sat)
=0.15V(typ)(I
C
=1A,I
B
=50mA).
•
5A peak pulse current
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤300µs, Duty Cycle≤2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
150
75
5
1.5
5
(
Note
)
5
150
-55~+150
Unit
V
V
V
A
W
°C
°C
BTN1053L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
