CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
•
High collector-emitter breakdown voltage. (BV
CEO
=160V @ I
C
=1mA)
•
Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
180
160
6
600
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTN5551N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
