CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C231N3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517N3
Features
•
High Breakdown Voltage:BVCEO≥350V
•
Complementary to BTP6520N3
Symbol
BTN6517N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current---continuous
Power Dissipation @TA=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
350
350
6
500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTN6517N3
CYStek Product Specification