CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 1/4
BTN8050N3
Description
The BTN8050N3 is designed for general purpose low frequency amplifier applications.
Features
•
High collector current , I
C
= 0.8A
•
Low V
CE
(sat), V
CE
(sat)=0.15V (typical), at I
C
/ I
B
= 400mA / 20mA
•
Complementary to BTP8550N3
.
Symbol
BTN8050N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
30
20
5
800
1.5
(Note)
225
150
-55~+150
Unit
V
V
V
mA
A
W
°C
°C
BTN8050N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
