CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C209N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
BTNA42N3
Description
•
High breakdown voltage. (BV
CEO
=300V)
•
Low collector output capacitance. (Typ. 3pF at V
CB
=30V)
•
Ideal for chroma circuit.
Symbol
BTNA42N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
300
300
6
500
225
(Note)
556
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
°C
°C
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTNA42N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
