CYStech Electronics Corp.
Low V
CESAT
PNP Epitaxial Planar Transistor
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 1/4
BTP8550N3
Features
•
Low V
CE(SAT)
, -0.18V(typically) at I
C
=-500mA/I
B
=-50mA
.
•
Complementary to BTN8050N3
.
Symbol
BTP8550N3
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
R
θJA
Tj
Tstg
Limits
-30
-20
-5
-1
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
BTP8550N3
CYStek Product Specification