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DAN217N3 参数 Datasheet PDF下载

DAN217N3图片预览
型号: DAN217N3
PDF下载: 下载PDF文件 查看货源
内容描述: 高速开关二极管 [HIGH-SPEED SWITCHING DIODE]
分类和应用: 二极管开关
文件页数/大小: 3 页 / 101 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号DAN217N3的Datasheet PDF文件第2页浏览型号DAN217N3的Datasheet PDF文件第3页  
CYStech Electronics Corp.
Spec. No. : C303N3C
Issued Date : 2002.12.18
Revised Date :
. .
Page No. : 1/3
DAN217N3
HIGH-SPEED SWITCHING DIODE
Description
The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are
connected in series and the unit is designed for high-speed switching application in hybrid thick
and thin-film circuits.
Features
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................. 70 V
Forward Current ............................................................................................................. 150 mA
Repetitive Forward Current ............................................................................................ 500 mA
Forward Surge Current (1ms)....................................................................................... 1000 mA
Characteristics
(Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70
VR=0, f=1MHz
IF=IR=10mA, RL=100Ω
measured at IR=1mA
Min
70
-
-
-
-
-
-
-
Max
-
715
855
1000
1250
2.5
1.5
6
Unit
V
mV
mV
mV
mV
uA
pF
nS
DAN217N3
CYStek Product Specification