Spec. No. : C380N3
Issued Date : 2005.04.15
Revised Date :2005.06.24
Page No. : 2/6
CYStech Electronics Corp.
Characteristics (Ta=25℃)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
VCBO
50
-
-
V
V
V
IC=50µA
IC=1mA
IE=50µA
VCEO
40
-
-
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
VEBO
ICBO
IEBO
5
-
-
-
-
-
-
0.5
0.5
µA VCB=50V
µA VEB=4V
VCE(sat)
-
40
-
60
mV IC=50mA, IB=2.5mA
DC Current Gain
hFE
R1
fT
100
600
-
kΩ
VCE=5V, IC=50mA
-
Input Resistance
3.29 4.7 6.11
Transition Frequency
-
200
-
MHz VCE=10V, IC=50mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
Package
Shipping
3000 pcs / Tape & Reel
Marking
F03
SOT-23
DTD143TN3
(Pb-free)
DTD143TN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
