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GURAE83 参数 Datasheet PDF下载

GURAE83图片预览
型号: GURAE83
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 177 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号GURAE83的Datasheet PDF文件第2页浏览型号GURAE83的Datasheet PDF文件第3页浏览型号GURAE83的Datasheet PDF文件第4页  
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
Page No. : 1/4
D44H11FP
Low V
CE
(sat)
High BV
CEO
Excellent current gain characteristics
Pb-free package
Features
Symbol
D44H11FP
Outline
TO-220FP
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
D44H11FP
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
80
80
6
10
20
(Note 1)
2
50
62.5
2.5
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C