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HBN2222S6R 参数 Datasheet PDF下载

HBN2222S6R图片预览
型号: HBN2222S6R
PDF下载: 下载PDF文件 查看货源
内容描述: 通用NPN外延平面晶体管 [General Purpose NPN Epitaxial Planar Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 159 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
Spec. No. : C227S6R
Issued Date : 2003.08.29
Revised Date :
Page No. : 1/4
(dual transistors)
HBN2222S6R
Features
Two BTN2222A chips in a SOT-363R package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Equivalent Circuit
HBN2222S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1 200mW per element must not be exceeded
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
75
40
6
600
300(total)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
*1
HBN2222S6R
CYStek Product Specification