CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
Spec. No. : C227S6R
Issued Date : 2003.08.29
Revised Date :
Page No. : 1/4
(dual transistors)
HBN2222S6R
Features
•
Two BTN2222A chips in a SOT-363R package.
•
Mounting possible with SOT-323 automatic mounting machines.
•
Transistor elements are independent, eliminating interference.
•
Mounting cost and area can be cut in half.
Equivalent Circuit
HBN2222S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1 200mW per element must not be exceeded
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
75
40
6
600
300(total)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
*1
HBN2222S6R
CYStek Product Specification