CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C223S6-R
Issued Date : 2005.06.29
Revised Date :
Page No. : 1/5
HBN2444S6R
(Dual Transistors)
Features
•
Two BTD2444 chips in a SOT-363 package.
•
Mounting possible with SOT-323 automatic mounting machines.
•
Transistor elements are independent, eliminating interference.
•
Mounting cost and area can be cut in half.
•
Low V
CE
(sat), V
CE
(sat)=40mV (typical), at I
C
/ I
B
= 50mA / 2.5mA
•
Pb-free package
Equivalent Circuit
HBN2444S6R
Outline
SOT-363
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
HBN2444S6R
CYStek Product Specification
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
40
25
6
800
1.5
(Note 1)
200 (total)
(Note 2)
150
-55~+150
Unit
V
V
V
mA
A
mW
°C
°C
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
