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HBP2907S6R 参数 Datasheet PDF下载

HBP2907S6R图片预览
型号: HBP2907S6R
PDF下载: 下载PDF文件 查看货源
内容描述: 通用PNP外延平面型晶体管(双晶体管) [General Purpose PNP Epitaxial Planar Transistors(dual transistors)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 194 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistors
Spec. No. : C317S6R
Issued Date : 2006.11.08
Revised Date :
Page No. : 1/5
(dual transistors)
HBP2907S6R
Features
Two BTP2907 chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Excellent H
FE
linearity.
Complementary to HBN2222S6R.
Pb-free package
Equivalent Circuit
HBP2097S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
-60
-60
-5
-600
200
(total)
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
(Note)
Note: 150mW per element must not be exceeded.
HBP2907S6R
CYStek Product Specification