CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C912J3
Issued Date : 2013.07.24
Revised Date :
Page No. : 1/ 9
MTB09N06J3
BV
DSS
I
D
R
DS(ON)
@V
GS
=10V, I
D
=20A
R
DS(ON)
@V
GS
=4.5V, I
D
=20A
60V
50A
6.3 mΩ(typ)
9 mΩ(typ)
Description
The MTB09N06J3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-252 package is universally preferred for all commercial-industrial applications.
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant and halogen-free package
Symbol
MTB09N06J3
Outline
TO-252(DPAK)
G
G：Gate D：Drain S：Source
D S
MTB09N06J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
