CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2009.05.19
Page No. : 2/8
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=11A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
T
A
=100℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
30
±20
12
10
48 *1
11
6
3 *2
3
1.5
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
25
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
Dynamic
Ciss
Coss
Crss
MTB11N03Q8
Min.
30
1.0
-
-
-
-
12
-
-
-
-
-
Typ.
-
1.5
38
-
-
-
-
9.5
13
2020
275
160
Max.
-
3.0
-
±
100
1
25
-
11
16.5
-
-
-
Unit
V
V
S
nA
μA
A
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=11A
V
GS
=
±
20
V
DS
=24V, V
GS
=0
V
DS
=20V, V
GS
=0, Tj=125°C
V
DS
=10V, V
GS
=10V
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
*1
*1
*1
pF
V
GS
=0V, V
DS
=15V, f=1MHz
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
