CYStech Electronics Corp.
30V N-Channel Logic Level Enhancement Mode MOSFET
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 1/7
MTB55N03N3
Features
•
V
DS
=30V
R
DS(ON)
=55m
Ω
@V
GS
=10V, I
D
=3.5A
R
DS(ON)
=85m
Ω
@V
GS
=4.5V, I
D
=2A
•
Lower gate charge
•
Pb-free lead plating and Halogen-free package
BV
DSS
R
DSON(Max)
I
D
30V
55mΩ
3.5A
Equivalent Circuit
MTB55N03N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings
(Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
T
A
=25°C
T
A
=70°C
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Power Dissipation
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
th, j-a
Tj, Tstg
Limits
30
±20
3.5
2.4
14
(Note 1 & 2)
1.5
(Note 3)
1
(Note 3)
100
(Note 3)
-55 ~ +175
Unit
V
V
A
A
W
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle
≤
1%
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
MTB55N03N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
