CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C708J3
Issued Date : 2009.04.29
Revised Date :
Page No. : 1/7
MTB60N06J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant & Halogen-free package
BV
DSS
I
D
R
DSON(MAX)
60V
12A
60mΩ
Equivalent Circuit
MTB60N06J3
Outline
TO-252
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=12A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
MTB60N06J3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
60
±20
12
8
30
12
7.2
3.6
20
10
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
