CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 1/11
MTC2103BJ4
Features
N-CH
BV
DSS
I
D
30V
8A
P-CH
-30V
-6A
21mΩ
45mΩ
R
DSON(MAX)
•
Low Gate Charge
•
Simple Drive Requirement
•
100% UIS test @ V
D
=15V, L=0.1mH, V
G
=10V, I
L
=7.5A, Rated V
DS
=30V, for N-CH
•
100% UIS test @ V
D
=15V, L=0.1mH, V
G
=-10V, I
L
=-6A, Rated V
DS
=-30V, for P-CH
•
RoHS compliant & Halogen-free package
Equivalent Circuit
MTC2103BJ4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Continuous Drain Current @ T
C
=25°C
I
D
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
*1
I
DM
Avalanche Current
I
AS
Avalanche Energy @ L=0.1mH, I
D
=10A(-10A for P-ch),R
G
=25Ω
E
AS
Repetitive Avalanche Energy @ L=0.05mH
*2
E
AR
Total Power Dissipation (T
C
=25℃)
Pd
Total Power Dissipation (T
C
=100℃)
Operating Junction and Storage Temperature Range
Tj, Tstg
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
MTC2103BJ4
30
±20
8
6
32
15
5
2.5
-30
±20
-6
-5
-24
-15
5
2.5
V
A
mJ
W
°C
25
18
-55~+175
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
