CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447S6R
Issued Date : 2009.06.03
Revised Date :
Page No. : 1/6
MTDK3S6R
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
BV
DSS
I
D
R
DSON
20V
100mA
3Ω
Symbol
MTDK3S6R
Outline
SOT-363
Tr1
Tr 2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (T
a
=25°C)
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Note : *1. Pulse Width
≤
300μs, Duty cycle
≤2%
*2. 200mW per element must not be exceeded
*3. Human body model, 1.5kΩ in series with 100pF
Symbol
BV
DSS
V
GS
I
D
I
DM
P
D
Tj
Rth,ja
Limits
20
±8
100
400
*1
300
*2
350
*3
-55~+150
415
Unit
V
V
mA
mA
mW
V
°C
°C/W
MTDK3S6R
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
