CYStech Electronics Corp.
Dual N-Channel Enhancement Mode MOSFET
Spec. No. : C582T8
Issued Date : 2013.07.25
Revised Date : 2013.09.03
Page No. : 1/8
MTDN8810T8
Description
BV
DSS
I
D
R
DSON
@V
GS
=4.5V, I
D
=5A
R
DSON
@V
GS
=2.5V,I
D
=2.6A
R
DSON
@V
GS
=1.8V,I
D
=1A
20V
5A
17.5mΩ(typ)
25mΩ(typ)
41mΩ(typ)
The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness and is
suitable for applications such as power management of portable device.
The TSSOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
•
1.8V drive available
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating package
Equivalent Circuit
MTDN8810T8
G：Gate S : Source
D : Drain
Ordering Information
Device
MTDN8810T8
Package
TSSOP-8
(Pb-free lead plating package)
Shipping
3000 pcs/ Tape & Reel
Marking
8810TS
MTDN8810T8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
