CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C890J3
Issued Date : 2012.12.14
Revised Date : 2012.12.19
Page No. : 1/9
MTE1K8N25J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant & Halogen-free package
BV
DSS
I
D
R
DS(ON)
@V
GS
=10V, I
D
=1A
R
DS(ON)
@V
GS
=6V, I
D
=1A
250V
2.5A
1.71Ω(typ)
1.72Ω(typ)
Equivalent Circuit
MTE1K8N25J3
Outline
TO-252AB
TO-252AA
G:Gate D:Drain
S:Source
G D S
G
D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Pulsed Drain Current
*1
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
250
±20
2.5
1.6
10
25
10
-55~+150
V
A
W
°C
MTE1K8N25J3
CYStek Product Specification