CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C929M3
Issued Date : 2013.08.11
Revised Date :
Page No. : 1/8
MTE1K8N25KM3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating & Halogen-free package
•
ESD protected
BV
DSS
I
D
R
DS(ON)
@V
GS
=10V, I
D
=0.5A
R
DS(ON)
@V
GS
=10V, I
D
=1A
R
DS(ON)
@V
GS
=10V, I
D
=2A
R
DS(ON)
@V
GS
=6V, I
D
=0.5A
250V
1A
1.33Ω(typ)
1.4Ω(typ)
1.63Ω(typ)
1.35Ω(typ)
Equivalent Circuit
MTE1K8N25KM3
D
Outline
SOT-89
G
G：Gate
D：Drain
S：Source
GD D S
S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
Pulsed Drain Current
*1
Total Power Dissipation @T
A
=25℃
*2
ESD susceptibility
*3
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature.
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
250
±20
1
0.8
4
2
2000
-55~+150
V
A
W
V
°C
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
*3. Human body model, 1.5kΩ in series with 100pF.
MTE1K8N25KM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
