CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C872F3
Issued Date : 2012.12.26
Revised Date :
Page No. : 1/9
MTE65N20F3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating package
BV
DSS
I
D
R
DSON(TYP)
V
GS
=10V, I
D
=11A
V
GS
=6V, I
D
=5A
200V
33A
61mΩ
66mΩ
Equivalent Circuit
MTE65N20F3
Outline
TO-263
G：Gate
S：Source
D：Drain
G
D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=1.6mH, I
D
=20A, R
G
=25Ω
Repetitive Avalanche Energy@ L=0.1mH
(Note 2)
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
A
=25℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
200
±20
33
23
70
20
320
4.6
168
3.75
-55~+175
V
A
mJ
W
°C
MTE65N20F3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
